1,037 research outputs found

    Nanowire Acting as a Superconducting Quantum Interference Device

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    We present the results from an experimental study of the magneto-transport of superconducting wires of amorphous Indium-Oxide, having widths in the range 40 - 120 nm. We find that, below the superconducting transition temperature, the wires exhibit clear, reproducible, oscillations in their resistance as a function of magnetic field. The oscillations are reminiscent of those which underlie the operation of a superconducting quantum interference device.Comment: 4 pages, 4 figures, 1 tabl

    The quantized Hall effect in the presence of resistance fluctuations

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    We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations. Focusing on the lowest Landau level we find that, while the diagonal resistivity displays strong fluctuations, the Hall resistivity is free of fluctuations and remains quantized at its ν=1\nu=1 value, h/e2h/e^{2}. This is true also in the insulating phase that terminates the quantum Hall series. These results extend the validity of the semicircle law of conductivity in the quantum Hall effect to the mesoscopic regime.Comment: Includes more data, changed discussio

    Universality at integer quantum Hall transitions

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    We report in this paper results of experimental and theoretical studies of transitions between different integer quantum Hall phases, as well as transition between the insulating phase and quantum Hall phases at high magnetic fields. We focus mainly on universal properties of the transitions. We demonstrate that properly defined conductivity tensor is universal at the transitions. We also present numerical results of a non-interacting electron model, which suggest that the Thouless conductance is universal at integer quantum Hall transitions, just like the conductivity tensor. Finite temperature and system size effects near the transition point are also studied.Comment: 20 pages, 15 figure

    Universality in an integer Quantum Hall transition

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    An integer Quantum Hall effect transition is studied in a modulation doped p-SiGe sample. In contrast to most examples of such transitions the longitudinal and Hall conductivities at the critical point are close to 0.5 and 1.5 (e^2/h), the theoretically expected values. This allows the extraction of a scattering parameter, describing both conductivity components, which depends exponentially on filling factor. The strong similarity of this functional form to those observed for transitions into the Hall insulating state and for the B=0 metal- insulator transition implies a universal quantum critical behaviour for the transitions. The observation of this behaviour in the integer Quantum Hall effect, for this particular sample, is attributed to the short-ranged character of the potential associated with the dominant scatterers

    The Quantized Hall Insulator: A New Insulator in Two-Dimensions

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    Quite generally, an insulator is theoretically defined by a vanishing conductivity tensor at the absolute zero of temperature. In classical insulators, such as band insulators, vanishing conductivities lead to diverging resistivities. In other insulators, in particular when a high magnetic field (B) is added, it is possible that while the magneto-resistance diverges, the Hall resistance remains finite, which is known as a Hall insulator. In this letter we demonstrate experimentally the existence of another, more exotic, insulator. This insulator, which terminates the quantum Hall effect series in a two-dimensional electron system, is characterized by a Hall resistance which is approximately quantized in the quantum unit of resistance h/e^2. This insulator is termed a quantized Hall insulator. In addition we show that for the same sample, the insulating state preceding the QHE series, at low-B, is of the HI kind.Comment: 4 page

    Near-Perfect Correlation of the Resistance Components of Mesoscopic Samples at the Quantum Hall Regime

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    We study the four-terminal resistance fluctuations of mesoscopic samples near the transition between the ν=2\nu=2 and the ν=1\nu=1 quantum Hall states. We observe near-perfect correlations between the fluctuations of the longitudinal and Hall components of the resistance. These correlated fluctuations appear in a magnetic-field range for which the two-terminal resistance of the samples is quantized. We discuss these findings in light of edge-state transport models of the quantum Hall effect. We also show that our results lead to an ambiguity in the determination of the width of quantum Hall transitions.Comment: As publishe

    Treating Vertical Root Fracture using Plasma-Rich Fibrin: A Case Report

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    Regenerative Endodontic Procedures (REP) are used to treat apical periodontitis in immature necrotic teeth and promote root maturation. Recently, REP has been speculated to arrest inflammatory external root resorption. Herein, we report the complicated treatment of apical root fracture using Plasma-Rich Fibrin (PRF) in a 12-year-old boy with a history of trauma to the right maxillary central incisor. The tooth was diagnosed to have necrotic pulp accompanied by symptomatic apical periodontitis and was treated with REP using PRF as a scaffold and restored. The tooth was asymptomatic at the 9-month follow-up; however, a sinus tract was detected on the buccal side. Retreatment was performed, and the tooth was filled with an apical plug of mineral trioxide aggregate and gutta-percha. Following the root canal, an apicoectomy was performed. During the surgery, a Vertical Root Fracture (VRF) was detected on the lateral aspect of the root extending to the middle third. The surface of the fracture was cleaned meticulously with a high-speed fine round diamond bur. The VRF was covered with PRF mixed with autologous bone. A follow-up at 57 months revealed a symptomless functioning tooth. This case highlights the importance of making every acceptable effort to preserve a hopeless tooth with VRF in a youngster for a few years and thereby preserve the surrounding alveolar bone

    Universality in the Crossover between Edge Channel and Bulk Transport in the Quantum Hall Regime

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    We present a new theoretical approach for the integer quantum Hall effect, which is able to describe the inter-plateau transitions as well as the transition to the Hall insulator. We find two regimes (metallic and insulator like) of the top Landau level, in which the dissipative bulk current appears in different directions. The regimes are separated by a temperature invariant point.Comment: 4 page, 2 eps figures included, submitte

    Duality in the Quantum Hall Effect - the Role of Electron Spin

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    At low temperatures the phase diagram for the quantum Hall effect has a powerful symmetry arising from the Law of Corresponding States. This symmetry gives rise to an infinite order discrete group which is a generalisation of Kramers-Wannier duality for the two dimensional Ising model. The duality group, which is a subgroup of the modular group, is analysed and it is argued that there is a quantitative difference between a situation in which the spin splitting of electron energy levels is comparable to the cyclotron energy and one in which the spin splitting is much less than the cyclotron energy. In the former case the group of symmetries is larger than in the latter case. These duality symmetries are used to constrain the scaling functions of the theory and, under an assumption of complex meromorphicity, a unique functional form is obtained for the crossover of the conductivities between Hall states as a function of the external magnetic field. This analytic form is shown to give good agreement with experimental data. The analysis requires a consideration of the way in which longitudinal resistivities are extracted from the experimentally measured longitudinal resistances and a novel method is proposed for determining the correct normalisation for the former.Comment: 22 pages, 8 figures, typeset in LaTe
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